Samsung today announced that it has started the mass production of its 10nm System-on-Chip (SoC) with FinFET technology. This is industry’s first mass production of 10-nanometer SoC FinFET technology.
In January 2015, Samsung the started the first mass production of 14nm FinFET mobile application processor with Exynos 7420 which powered the Galaxy S6. “The industry’s first mass production of 10nm FinFET technology demonstrates our leadership in advanced process technology,” said Jong Shik Yoon, Executive Vice President, Head of Foundry Business at Samsung Electronics. “We will continue our efforts to innovate scaling technologies and provide differentiated total solutions to our customers.”
Talking about FinFET(Fin Field Effect Transistor), it is a non-planar double gate transistor with the elevated channel so that the gate can surround it on three sides. FinFET also offers multiple benefits like less area per transistor low power consumption and faster switching speed over traditional MOSFET technology. With FinFET, Samsung is able to manufacture mobile application processor as small as 10nm and 14nm.
Samsung’s new 10nm FinFET process node adopts additional enhancements in terms of technology and design. According to the company, on comparing with its predecessor 14nm process node, it provides 30% increase in area efficiency, 27% higher performance, and 40% lower power consumption.
Following the first generation 10nm process node (LPE), the Korean company is also planning to start mass production of the second generation 10nm process node (LPP) in the second half of 2017.
SoC with 10nm process technology will power the device launching early next year and is expected to become more widely available throughout the year 2017. We’re speculating it to power the company’s next flagship device – Galaxy S8.