Samsung’s upcoming Galaxy S10 is shaping up to be a massive upgrade over last year’s Galaxy S9 in nearly every area. Unlike the Galaxy S9, which was largely similar to the Galaxy S8 in terms of design, the Galaxy S10 is expected to feature an all-new design and impressive internals. As is usually the case, the US-bound variants of the smartphone are expected to run on a Qualcomm Snapdragon chipset, while most international versions will be powered by an Exynos 9820 chipset. The Galaxy S10 SM-G970U variant has now been caught on the Geekbench benchmark database, which is expected to be the Galaxy S10 Lite variant.
Samsung Galaxy S10 Lite SM-G970U Variant to Feature Snapdragon 855 SoC, 6GB of RAM
The SM-G970U Geekbench listing suggests the Galaxy S10 Lite will run on a Qualcomm Snapdragon 855 7nm mobile processor and come with 6GB of RAM. While the processor identifier suggests that it is indeed the Snapdragon 855 chipset, the benchmark scores are oddly much lower than what we would have expected. The device scored just 1,986 points in the single-core test and 6,266 points in the multi-core test. Both the scores are quite low even when compared to the Galaxy S9. This could possibly mean that the listing is actually fake.
Unlike last year, the upcoming Galaxy S-series lineup will include three models: Galaxy S10, Galaxy S10 Plus, and Galaxy S10 Lite. The Lite variant is expected to be powered by the same Snapdragon 855 SoC as the standard Galaxy S10 and Galaxy S10 Plus in the US, while in other regions it will be powered by an Exynos 9820 SoC. As for screen sizes, Chinese leakster Ice Universe recently claimed the Galaxy S10 Lite is going to sport a 5.8-inch display, while the standard Galaxy S10 will feature a 6.1-inch sized display. Samsung Galaxy S10 Plus, on the other hand, is expected to sport a 6.4-inch display size. The premium Galaxy S10 and Galaxy S10 Plus models are expected to feature an in-display fingerprint sensor as well, while the Galaxy S10 Lite will probably feature a side-mounted fingerprint sensor.