Compare HTC Desire 616 Dual SIM vs Lenovo Vibe P1m

Feature Comparison

  • Both HTC Desire 616 Dual SIM and Lenovo Vibe P1m have same Screen Size
  • The Lenovo Vibe P1m's got 16GB Internal Storage, while HTC Desire 616 Dual SIM's Internal Storage is 4GB
  • RAM of Lenovo Vibe P1m's is 50.0% more than HTC Desire 616 Dual SIM
 
HTC Desire 616 Dual SIM
Lenovo Vibe P1m
Highlight:
All Features
Only Differences
Rank Rank #2Rank #1  
Spec Score 
76 /100
100 /100
  
This score is assigned based on the product's specifications without taking price into consideration.
 
53 Value For Money Score
55 Value For Money Score
  
Display     
Screen Size
5 inch 5 inch   
Screen Resolution
1280 x 720 pixels 1280 x 720 pixels   
Screen Type
LCD LCD   
Pixel Density
293.7 PPI 294 PPI   
Screen Protection
- -   
Bezel Less
- -   
Screen Features
- -   
Chipset     
Brand
MediaTek MediaTek   
Processor Speed
1.4GHz 1GHz   
Processor
MediaTek MT6592 MediaTek MT6735P   
Processor Type
Octa-Core Quad-Core   
RAM
1GB 2GB   
Graphics
Mali-450 MP4 Mali-T720   
Camera     
Rear Camera Resolution
8MP 8MP   
Dual Rear Camera
- -   
Front Camera Resolution
2MP 5MP   
Dual Selfie Camera
- -   
Camera Details
Geo-tagging, Touch Focus, Face Detection, Simultaneous HD Video & Image Recording, HDR -   
Video Recording Resolution
Full HD Video Recording (1080p) HD Video Recording (720p)   
Camera Features
Autofocus, LED Flash Autofocus, LED Flash   
General Specifications     
Operating System
Android Android   
OS Version
Android 4.2 Jelly Bean Android 5.1 Lollipop   
OS Detail
- -   
OS Upgradable To
- -   
Device Type
Touchscreen Touchscreen   
USB Connector Type
Micro USB Micro USB   
Features
GPS, FM Radio FM Radio   
Sensors
- -   
IP Rating
- -   
Dimensions (mm)
142 x 71.9 x 9.2 141 x 71.8 x 9.3   
Weight
150 grams 148 grams   
Connectivity
3G, 2G, WiFi, Bluetooth 4G LTE (India Compatible), 3G, 2G, WiFi, Bluetooth   
Headphone Jack Type
3.5mm 3.5mm   
Color
Pearl White, Gray Black, White   
Build Material
Plastic Plastic   
Device Warranty
1 Year 1 Year   
Warranty Details
- -   
Body SAR
- -   
Head SAR
- -   
In The Box
- -   
Audio Features
- -   
Storage     
Internal Storage
4GB 16GB   
Approx. User Available Storage
2GB 11GB   
Card Slot
Yes Yes   
Maximum Card Slot Capacity
32GB 32GB   
OTG Support
- -   
Communication     
SIM Card Slots
Dual Dual   
Network Type
GSM GSM   
SIM Card Type
Mini (Normal) SIM, Micro SIM Micro SIM   
SIM 1 Details
- Micro SIM   
SIM 2 Details
- Micro SIM   
Hybrid SIM (microSD + SIM)
No No   
2G Bands
- -   
3G Bands
- -   
4G Bands
- -   
Battery     
Battery Capacity
2000mAh 3900mAh   
Battery Type
Lithium-Polymer (Li-Po) Lithium-Polymer (Li-Po)   
Removable Battery
Yes No   
Wireless Charging
- -   
Fast Charging
- -   

HTC Desire 616 Dual SIM vs Lenovo Vibe P1m Specs

Specs
HTC Desire 616 Dual SIMLenovo Vibe P1m  
Screen Size 5 inch5 inch  
Rear Camera Resolution 8MP8MP  
RAM 1GB2GB  
Battery Capacity 2000mAh3900mAh  
Front Camera Resolution 2MP5MP  

HTC Desire 616 Dual SIM Pros & Cons

The Good
  • Good display quality, fairly sharp at 294PPI
  • Decent camera with Full HD video recording
The Bad
  • Average performance with just 1GB of RAM
  • Way outdated Android version (Jelly Bean 4.2)
  • Lacks 4G LTE support

Lenovo Vibe P1m Pros & Cons

The Good
  • Huge 3900mAh battery helps it work longer
  • 16GB of Internal storage
  • Dual SIM 4G LTE Connectivity
The Bad
  • Only records in 720p
  • Lags under heavy multitasking

Talk about this comparison, ask your questions!

This page helps you compare HTC Desire 616 Dual SIM with Lenovo Vibe P1m. When you see HTC Desire 616 Dual SIM Vs Lenovo Vibe P1m comparison on Pricebaba, watch-out for the specifications of these phones and also the VFM score. With Pricebaba’s Value For Money Score, you can know how HTC Desire 616 Dual SIM stands against Lenovo Vibe P1m and which one you should buy. The best price of HTC Desire 616 Dual SIM is currently Rs. 9,891. The lowest price for Lenovo Vibe P1m is Rs. 17,000. The prices for both these products were updated December 11, 2017.
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